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july 2015 docid027833 rev 3 1 / 13 this is information on a product in full product ion. www.st.com STW12N150K5 n - channel 1500 v, 1.6 typ.,7 a mdmesh? k5 power mosfet in a to - 247 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STW12N150K5 1500 v 1.9 7 a 250 w ? industrys lowest r ds(on) * area ? industrys best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description this very high voltage n - channel power mosfet is designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance and ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summa ry order code marking package packing STW12N150K5 12n150k5 to - 247 tube t o-247 1 2 3
contents STW12N150K5 2 / 13 docid027833 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 to - 247 package information ................................ ........................... 10 5 revision history ................................ ................................ ............ 12
STW12N150K5 electrical ratings docid027833 rev 3 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d drain current at t c = 25 c 7 a i d drain current at t c = 100 c 4 a i dm (1) drain current (pulsed) 28 a p tot total dissipation at t c = 25 c 250 w dv/dt (2) peak diode recovery voltage slope 4.5 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns t j operating junction temperature - 55 to 150 c t stg storage temperature notes: (1) pulse width limited by safe operating area (2) i sd 7 a, di/dt 100 a/s, v peak v (br)dss (3) v ds 1200 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 0.5 c/w r thj - amb thermal resistance junction - amb 50 c/w table 4: avalanche characteristics symbol parameter value unit i ar max current during repetitive or single pulse avalanche 2 a e as single pulse avalanche energy 900 mj
electrical characteristics STW12N150K5 4 / 13 docid027833 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) tab le 5: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 1500 v i dss zero gate voltage drain current v gs = 0 v, v ds = 1500 v 1 a v gs = 0 v, v ds = 1500 v, tc=125 c 50 a i gss gate body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 3.5 a 1.6 1.9 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0 v, v ds = 100 v, f = 1mhz - 1360 - pf c oss output capacitance - 80 - pf c rss reverse transfer capacitance - 0.7 - pf c o(tr) (1) equivalent capacitance time related v ds = 0 v to 1200 v, v gs = 0 v - 82 - pf c o(er) (2) equivalent capacitance energy related - 32 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 3 - q g total gate charge v dd = 1200v, i d = 7 a v gs = 10 v (see figure 16: "gate charge test circuit" ) - 47 - nc q gs gate - source charge - 8 - nc q gd gate - drain charge - 32 - nc notes: (1) time related is defined as a constant equivalent capacitance giving the same charging time as coss when vds increases from 0 to 80% vdss. (2) energy related is defined as a constant equivalent capacitance giving the same stored energy as coss when vds increases from 0 to 80% vdss.
STW12N150K5 electrical characteristics docid027833 rev 3 5 / 13 table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 750 v, i d = 3.5 a, r g = 4.7 v gs = 10 v (see figure 18: "unclamped inductive load test circuit" ) - 25 - ns t r rise time - 8 - ns t d(off) turn - off delay time - 90 - ns t f fall time - 37 - ns table 8: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 7 a i sdm source - drain current (pulsed) - 28 a v sd (1) forward on voltage i sd = 7 a, v gs = 0 v - 1.5 v t rr reverse recovery time i sd = 7 a, v dd = 60 v di/dt = 100 a/s, (see figure 17: "test circuit for inductive load switching and diode recovery times" ) - 302 ns q rr reverse recovery charge - 3.71 c i rrm reverse recovery current - 24.6 a t rr reverse recovery time i sd = 7 a,v dd = 60 v di/dt = 100 a/s, tj = 150 c (see figure 17: "test circuit for inductive load switching and diode recovery times" ) - 432 ns q rr reverse recovery charge - 4.71 c i rrm reverse recovery current - 21.8 a notes: (1) pulsed: pulse duration = 300s, duty cycle 1.5% table 9: gate - source zener diode symbol parameter test conditions min. typ. max. unit v(br)gso gate - source breakdown voltage i gs = 1 ma, i d = 0 a 30 - v the built - in back - to - back zener diodes have been specifically designed to enhance the esd capability of the device. the zener voltage is appropriate for efficient and cost - effective intervention to protect the device integrity. these integrated zener diodes thus eliminate the need for external components.
electrical characteristics STW12N150K5 6 / 13 docid027833 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 -3 10 -2 10 -1 0.2 0.1 0.05 0.02 t p (s) gc18460
STW12N150K5 electrical characteristics docid027833 rev 3 7 / 13 figure 8 : capacitance variation figure 9 : output capacitance stored energy figure 10 : normalized gate threshold voltage vs temperature figure 11 : normalized on - resistance vs temperature figure 12 : normalized v (br)dss vs temperature figure 13 : source - drain diode forward characteristics
electrical characteristics STW12N150K5 8 / 13 docid027833 rev 3 figure 14 : maximum avalanche energy vs t j
STW12N150K5 t est circuits docid027833 rev 3 9 / 13 3 test circuits figure 15 : switching times test circuit for resistive load figure 16 : gate charge test circuit figure 17 : test circuit for inductive load switching and diode recovery times figure 18 : unclamped inductive load test circuit figure 19 : unclamped inductive waveform figure 20 : switching time waveform
package information STW12N150K5 10 / 13 docid027833 rev 3 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 247 package information figure 21 : to - 247 package outline
STW12N150K5 package information docid027833 rev 3 11 / 13 table 10: to - 247 package mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
revision history STW12N150K5 12 / 13 docid027833 rev 3 5 revision history table 11: document revision history date revision changes 11 - may - 2015 1 first release. 30 - jun - 2015 2 updated title and features in cover page. updated section 4: "electrical ratings" , section 5: "electrical characteristics" . added s ection 5.1: "electrical characteristics (curves)" . minor text changes. 07 - jul - 2015 3 updated section 5.1: "electrical characteristics (curves)" . minor text changes.
STW12N150K5 docid027833 rev 3 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from t he information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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